The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The N dopant site within the ZnSe lattice was investigated using the channeling technique in combination with nuclear reaction analysis (channeling-NRA). We used the nuclear reaction 15 N (p,α) 12 C for non-destructive N detection and improved the detection limit of N up to 1 x 10 17 cm -3 . Molecular beam epitaxy (MBE) grown ZnSe doped with ...
ZnSe heteroepitaxy on GaAs(0 01) and GaAs(1 1 0) substrates has been studied using molecular beam epitaxy. ZnSe films were grown on an atomically flat and low defect density hemoepitaxial GaAs(0 0 1) and GaAs(1 1 0) buffer. At the beginning of ZnSe growth on Zn-exposed GaAs(0 0 1)-β (2 x 4) and on a GaAs(1 1 0) without Zn/Se-pre-deposition, RHEED oscillation was clearly observed. Low defect ZnSe films...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.