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UV irradiation of sol-gel derived HfO 2 thin films in N 2 O using excimer lamps was found to effectively remove OH groups, dissociate unreacted Hf-OH and further oxidize sol-gel layers, forming HfO 2 thin films with a high stoichiometry of 1.97. No interface oxidation and silicate formation has been observed when irradiated at 400 o C for 20min while the films retain...
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