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The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (100) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism...
X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and work-function measurements have been used to investigate the Y/SiO 2 /Si(100) interfaces in situ as a function of annealing temperature. The results show that yttrium is very reactive with SiO 2 and can react with SiO 2 to form Y silicate and Y 2 O 3 even at room temperature...
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