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We present the first triple junction multibandgap cells incorporating three intrinsic absorber layers that are all deposited by hot wire CVD (Cat-CVD). The bottom and middle cell have a microcrystalline silicon (/spl mu/c-Si:H) absorber layer and the top cell has an amorphous silicon (a-Si:H) intrinsic layer. The cells are made in the configuration stainless steel/n-i-p/n-i-p/n-i-p/ITO and do not...
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