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GaAsSb ternary epitaxial layers were grown on GaAs (001) substrate in various Sb 4 /As 2 flux ratios by solid source molecular beam epitaxy. The alloy compositions of GaAs 1−y Sb y were inferred using high-resolution X-ray symmetric (004) and asymmetric (224) glance exit diffraction. The non-equilibrium thermodynamic model is used to explain the different incorporation...
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