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Silicon nanoparticles on fused silica have potential as recombination centers in infrared detectors due quantum confinement effects that result in a size dependent band gap. Growth on fused silica was realized by etching in HF, annealing under vacuum at 700–750 °C, and cooling to ambient temperature before ramping to the growth temperature of 600 °C. Silicon particles could not be grown in a thermal...
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