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Thin films of MgO were grown on an Si(100) substrate at 1000K by rf-sputtering using two different targets: Mg and MgO. The total pressure during the growing process was maintained at 7.0x10 -3 mbar and the O 2 to Ar percentage was varied from 5% to 50%. X-ray diffraction measurements indicate that two different crystalline structures are formed depending on whether the target...
This paper describes the modifications introduced by nitrogen implantation on V5 at.% Ti alloys at high energy. Two sets of samples were treated with three successive atomic and molecular nitrogen implantations, in order to obtain flat profiles of nitrogen concentration, namely 20 and 40%. On implanted samples microhardness tests with a final load of 2 mN showed a hardness increase by a factor of...
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