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This work presents the development of a novel bidirectional Solid State Disconnect (SSD) module based on Silicon Carbide (SiC) Junction Field Effect Transistors (JFET) capable of a fast disconnect action upon reaching a preset value of the current through the SSD. Due to the superior properties of SiC material and the low on-resistance of the normally-on SiC JFET, a very low insertion loss can be...
For NiSi FUSI gate transistors, switching behaviors have been observed after breakdown (BD) under certain favorable conditions. The conductive BD path can be ??switched-off?? if a reverse bias, as opposed to the stressing voltage, is applied, a condition required for observing SET and RESET conduction in switching material systems. Using the percolation model of BD of gate dielectric systems, we explain...
First the surface-potential-based compact MOS model, PSP, is introduced. After a discussion of the general advantages of this model, it is benchmarked against measurements from the 45 nm technology node. Finally, we zoom in on the modeling in PSP of two effects that are of special importance for RF applications: distortion and noise.
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