The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The novel use of SiCN underneath TEOS oxide as a bonding surface in the wafer bonding of Backside-illuminated (BSI) sensor is proposed and the mechanism of void control by SiCN is clarified. In general, high-temperature processing results in generating voids between the wafer interfaces after bonding due to the release of high-pressure H2O contained in TEOS. In the proposed mechanism, the SiCN exposed...
The surface reaction between water cluster ions and Si substrates was investigated. The incident angle dependence of the sputtering yield of Si induced by the irradiation of a water cluster ion beam was measured at the acceleration voltage of 6kV. The mean cluster size was 6.3×10 3 molecules. The sputtering yield of Si relative to that of normal incidence had a broad peak around the incident...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.