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A 60 GHz wideband power amplifier (PA) is fabricated in standard CMOS SOI 65 nm process. The PA is constituted by two cascode stages. Input, output and inter-stage matching use coplanar wave guide (CPW) transmission lines that have low losses thanks to the high resistivity SOI substrate. The PA measurements are carried out for supply voltages VDD going from 1.2 V to 2.6 V and achieve a saturation...
A 77 GHz 90 nm CMOS power amplifier (PA) demonstrates a gain of 17.4 dB and a saturated output power of 5.8 dBm at a low supply voltage of 0.7 V. To take care of hot-carrier injection degradation, the supply voltage is reduced from a standard voltage of 1.0 V. The saturated output power is increased to 9.4 dBm with a linear gain of 20.6 dB at 1.0 V operation. The amplifier consists of three-stage...
This paper presents recent progress on 60-GHz-band MMIC developments based on standard 90-nm CMOS technology. For a low-noise amplifier (LNA), a simple noise model is employed to facilitate efficient design in the millimeter- wave range. For a power amplifier (PA), a reliability issue due to degradation of hot carrier injection should be carefully considered for large-signal operation. To maximize...
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