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Further enhancement of the efficiency of an InGaN/GaN quantum well (QW) light-emitting diode (LED) through QW coupling with surface plasmons generated on Ag nano-gratings by inserting a SiO2 layer between semiconductor and metal is demonstrated.
With a dielectric layer between metal and semiconductor for generating surface plasmon, the dissipation rate of metal is reduced and the evanescent-field range is increased such that surface plasmon coupling leads to stronger emission enhancement.
Surface plasmon polariton and localized surface plasmon couplings with InGaN/GaN quantum wells in bluegreen light-emitting diodes are used for enhancing their emission efficiencies by 25-200 % depending on the used quantum well crystal quality.
We observe the enhancement of photoluminescence excitation through the coupling of an InGaN/GaN quantum well (QW) with surface plasmons which are generated on an Ag nanostructure deposited on the SiN-coated QW epitaxial sample.
We demonstrate the temperature dependent behavior of the surface plasmon (SP) coupling with an InGaN/GaN quantum well (QW). The SP coupling efficiency relies on the availability of carriers with sufficient momentum for transferring the energy and momentum into the SP modes. At low temperatures, the carriers are trapped by the potential minima in the QW and the SP coupling is weak. As temperature increases,...
We analyze the contribution of the screening of the quantum-confined Stark effect (QCSE) to the light emission enhancement behavior in the surface plasmon (SP) coupling process with an InGaN/GaN quantum well (QW). From the measurements of excitation power-dependent photoluminescence and time-resolved photoluminescence (TRPL), and the fitting to the TRPL data based on a rate-equation model, it is found...
We demonstrate the loss of surface plasmon (SP) energy through oscillating electron leakage via the ohmic contact of either p-type or n-type GaN layer in the coupling process between SP and an InGaN/GaN quantum well (QW). The observation implies that in using the SP-QW coupling for enhancing emission in a light-emitting diode, the metals for ohmic contact and SP generation must be separated. A thin...
Nitride nanostructures and nano-photonics, including an MOCVD prestrained InGaN/GaN quantum well growth technique for orange and white LED fabrication and surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement, are reported.
After several fundamental phenomena of surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement are studied, we evaluate the application of such a coupling process to a light-emitting diode with experimental supports.
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