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Residual stresses in sputtered ZnO films on Si are determined and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After an 800°C annealing, ZnO films are tensily stressed while ZnO films encapsulated by Si 3 N 4 are...
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