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By adopting a new pulse pre-bias (Vpre) scheme, the response and recovery characteristics is significantly improved in Si field-effect transistor (FET)-type gas sensor having ZnO film as a sensing layer. A target gas of NO2, which is one of oxidizing gases, is detected by the FET-type sensor at various Vpres. It is demonstrated that a negative Vpre (−3 V) improves the response by ∼2.5 times and a...
The effects of post-deposition annealing (PDA) on the electrical characteristics of ZrO2 and HfO2 gate dielectric films were investigated. After PDA at 600°C, the insulating properties of ZrO2 were improved, while those of HfO2 were deteriorated. The improved insulating properties of ZrO2 are attributed to both the negligible increase of interfacial layer (IL) thickness and the transformation of its...
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