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NiSi x films were deposited using chemical vapor deposition (CVD) with a Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system. The step coverage quality of deposited NiSi x was investigated using a horizontal type of hot-wall low pressure CVD reactor, which maintained a constant temperature throughout the deposition area. The step coverage quality improved...
Ni-silicide film was deposited at a low temperature of 160 °C by CVD using a Ni(PF 3 ) 4 /Si 3 H 8 gas system. Injecting Si 3 H 8 during the Ni deposition does not affect the deposition rate, but the step-coverage quality deteriorates at high growth temperatures. At high growth temperatures, the Ni/Si ratio of the film deposited on the sidewall varies...
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