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The low‐temperature behavior of single‐crystalline Bi2Mn4O10 is studied using dielectric impedance spectroscopy and inelastic neutron scattering. Several relaxation processes with pronounced anisotropic character can be identified in the frequency range between 1 Hz and 1 MHz for temperatures between 150 and 300 K. The dielectric as well as the mechanical properties are demonstrated close to the...
Advanced optoelectronic devices require monolithic integration of different functions at chip level. This is the case of multi‐quantum well (MQW) electro absorption modulated lasers (EMLs) realized by using the selective area growth (SAG) technique, and which can be employed in long‐distance, high‐frequency optical fiber communication applications. We demonstrate that a micrometer‐resolved X‐ray beam...
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