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Solar‐blind deep ultraviolet (DUV) photodetectors have been a hot topic in recent years because of their wide commercial and military applications. A wide bandgap (4.68 eV) of ternary oxide Zn2GeO4 makes it an ideal material for the solar‐blind DUV detection. Unfortunately, the sensing performance of previously reported photodetectors based on Zn2GeO4 nanowires has been unsatisfactory for practical...
On page 704, T. Y. Zhai and co‐workers prepare high‐performance solar‐blind DUV photodetectors based on individual CVD‐fabricated Zn2GeO4 nanowire and perform in‐depth analysis of their optoelectronic characteristics. The device demonstrates outstanding solar‐blind light sensing performance with a high responsivity, a high external quantum efficiency, and a fast response speed.
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