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Implanting hydrogen ions (H+) into silicon creates defects that can act as donors. The microscopic structure of these defects is not entirely clear. There is a difference in the resulting doping profiles if the silicon is produced by the float zone (Fz) process or the magnetic Czochralski (m:Cz) process. Silicon produced by the m:Cz process has higher concentrations of oxygen and carbon than silicon...
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