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We demonstrated 10.7 Gb/s REAM-SOA using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of >; 9 dB and a power penalty of <; 60; 1 dB up to 20 km transmission over a 40 nm spectral range.
We fabricated SOA-REAM with PBH-SOA and deep-ridge EAM for 10Gbps WDM-PON. Small signal gain is about 23dBm and PDG is less than 1dB. After 20km transmission, power penalty is less than 1dB over 35nm.
We report on the signal monitoring characteristics in a reflective semiconductor optical amplifier (RSOA) transistor outline can with a monitor-photodiode, thermoelectric cooler, and thermistor. Because of spatial hole-burning in the RSOA cavity, a front-side signal-monitoring module exhibits wider windows and better linearity in monitor current to signal power ratio (MCSPR) than a rear-side signal-monitoring...
We present design issue of RSOA and report fabricated-device/packaged-module characteristics for WDM-PON. Optical gain, 3dB ASE bandwidth and polarization dependent gain were about 25 dB, 35 nm and less than 1.0 dB, respectively. BER power penalty after 2.5 Gbps-20 km transmission was about 1.9 dB at 10−9 BER.
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