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In this letter, we report GaN planar Schottky barrier diodes (SBDs) with the DC and RF performance. The air-bridge structure is adopted to reduce the parasitic parameters. The cut-off frequency (ƒc) of the diode with an anode diameter of 5 µm is calculated to be 655 GHz at zero bias. By using four anodes series GaN SBDs chip, a frequency tripler with a peak output power of 2.1 mW at 103.5 GHz is demonstrated...
The Timed Photon Counter ‘Tipsy’ detector relies on electron-emitting thin films for generation of primary electrons from a photocathode and the subsequent amplification via SiN dynodes. Both of these films represent materials challenges, and both are being investigated using synchrotrons to optimize their performance. For the dynodes, a program of soft x-ray photoemission spectroscopy (XPS) has been...
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