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ZnO films were deposited on Si substrate by RF-sputtering using titanium nitride (TiN) as buffer layer that was deposited at different thicknesses: 160 and 2290nm. Despite the lattice mismatch of up to 6.35% between ZnO and TiN, the ZnO films deposited on TiN buffer layers show enhanced near-band-edge photoluminescence (PL) emission at room temperature which is two times higher of magnitude than those...
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