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We reported large size amorphous Indium-Gallium-Zinc-Oxide and Indium-Tin-Zinc-Oxide thin film transistors active-matrix organic light-emitting diode television development history in AUO. The Gen6 threshold voltage uniformity can lower than 1.0V. Amorphous Indium-Tin-Zinc-Oxide thin film transistors show a higher mobility of 33.2 cm2/VS. Amorphous 56 inches back channel etch type Indium-Tin-Zinc-Oxide...
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