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We measured HX-PES (Si 1s) of low energy ion implanted silicon substrate before and after spike RTA, and compared it with that of plasma doped (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. After spike RTA, PD sample showed superior impurity activation than that of I/I sample. Both I/I sample and PD sample showed...
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