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2D Sn2+‐Based Perovskites
In article number 2204870, Yong‐Young Noh and co‐workers demonstrate the high doping efficiency of halide perovskites using a simple molecular charge transfer approach and provides a new opportunity for employing 2D perovskites in high‐efficiency optoelectronic devices. A thin p‐type dopant layer, F4‐TCNQ and MoO3, deposited using thermal evaporation improves the control...
2D metal halide perovskites are attracting great interest for their diverse applications owing to their intrinsic superior stability compared to their 3D counterparts; however, their device performance is limited by insufficient charge transport because of the insulating bulky organic ligands. Electrical doping is a direct and efficient method for improving the electrical properties of emerging semiconductors;...