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GaSb-based diode lasers emitting at a wavelength of 2.8 μm have been grown. The devices feature GaSb or Al0.21 Ga0.58 In0.21 As0.20 Sb0.80 barrier layers for the quantum wells, respectively. The transparency current density, modal gain, internal absorption, and characteristic temperature have been investigated on both devices. Since the barrier layers serve at the same time as waveguide for the laser...
This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied...
In this work, we explore a broad range of exposure conditions, including two rarely studied parameters of polarization and pulse duration, to minimize propagation loss and to better understand the differing formation mechanisms in borosilicate and fused silica glass waveguides.
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