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Phase engineering by strain in 2D semiconductors is of great importance for a variety of applications. Here, a study of the strain‐induced ferroelectric (FE) transition in bismuth oxyselenide (Bi2O2Se) films, a high‐performance (HP) semiconductor for next‐generation electronics, is presented. Bi2O2Se is not FE at ambient pressure. At a loading force of ≳400 nN, the piezoelectric force responses exhibit...
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