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Enhanced etch rate in the phosphorus enriched area in PTEOS/BPSG stacked interlayer dielectric (ILD) during contact open process were shown to have tungsten notch and micro-crack nucleation at the interface. Subsequent CVD TiN and W deposition can lead to penetration into this micro-crack that can lead to delamination after temperature cycling (TC) stress test. The notch defect was a result of higher...
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