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Copper metallization with three kinds of barrier layers (Ta, TaN and multistacked Ta/TaN) and undoped silicate glass as insulation dielectric layer were investigated and the effects of barrier layer on the reliability of the copper lines were examined. It was found that the Cu lines embedded in Ta had the best anti-electromigration (EM) property among the three kinds of barriers. Continuous current...
We have deposited high-quality cubic α-Ta films by incorporating an Ar/N 2 Plasma pre-treatment process prior to the deposition of the Ta film. The α-Ta films have low resistivity of approximately 30.6 μΩcm and near nanocrystalline texture. An ultrathin amorphous Ta(N) interlayer, generated during the Ar/N 2 pre-treatment on the SiO 2 surface, plays a critical role on the nucleation...
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