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Monolithic, two-stage amplifiers using 0.5*80 mu m/sup 2/ gate GaAs/AlGaAs heterojunction FETs have been developed for Ka-band operation. These monolithic two-stage amplifiers were fabricated using ion implantation for the active layer and optical lithography for the 0.5 mu m gate length. MMIC two-stage amplifiers achieved average gains of 12.6+or-1.4 dB at 30 GHz and 8.8+or-2.0 dB at 40 GHz, respectively,...
Subhalf-micrometre gate length ion-implanted GaAs MESFETs have been fabricated on 3 inch diameter substrates using trilayer deep UV lithography. Implanted MESFETs with 0.3 mu m gate lengths exhibit a maximum extrinsic transconductance of 205 mS/mm at a drain current of 600 mA/mm. From S-parameter measurements, a current gain cutoff frequency f/sub t/ of 56 GHz and a maximum available gain cutoff frequency...
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