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We used pump-probe technique to investigate recombination dynamics of photogenerated carriers in photodiodes consisting of InAs/GaInSb W-structured superlattices. Recombination time constants of 1.6 ns and 10 ns were measured under high and low powers, respectively.
We observed that photoluminescence intensities clamped at certain values as the pump intensity was increased, due to the presence of nonlinear degenerate electron gas and saturation of photogenerated and localized holes in InN.
We have observed blue and red Stark shifts of two excitonic transition peaks in multiple GaN/AlN asymmetric coupled quantum wells due to increases in electric fields originating from spatial separation of photogenerated electrons and holes.
THz average output power as high as 2.4 microwatts is generated from InN films, with the mechanism being the interference between optical rectification and photocurrent surge.
In this work, we present our new findings following our studies of the THz generation from InGaN/GaN multiple quantum wells (MQW's), pumped by a frequency-doubled sub-picosecond Ti:sapphire amplifier at the output wavelength of 395 nm. For the pump power of 320 mW, an average output power of 32 nW was measured in the frequency range of 300 GHz - 4.28 THz. Based on the photo luminescence (PL) spectra...
We have evidenced the relaxation of excitons cascading down from the highest energy state to the ground level in vertically-stacked InAs quantum dots grown on an InP substrate, which is resonantly enhanced by LO phonons.
By removing negative differential conversion efficiencies for THz generation, observed on InP, we have increased the THz output power by one order of magnitude, making InP comparable to ZnTe and InAs as highly efficient emitter.
Broadband THz pulses have been generated from InGaN/GaN multiple quantum wells pumped by a frequency-doubled sub-picosecond laser amplifier at 395 nm. Enhanced THz emissions are strongly correlated with reduced photoluminescence intensities.
Under relatively high pump intensities, photoluminescence intensities across the miniband were greatly reduced, which was attributed to the existence of periodic electric fields caused by spatially-separated photogenerated electrons and holes in short-period type-II InAs/GaSb superlattices.
Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
Efficient terahertz pulses have been generated based on resonant optical rectification using sub-picosecond laser pulses at 790 run from nanolayers to microlayers of InN with the layer thicknesses in the range of 25-1270 nm.
We demonstrate that longitudinal-optical phonons in type-II InAs/GaSb quantum wells can be used to up-convert photoluminescence. Such a phenomenon could be used to achieve laser-induced cooling of lattices.
We have studied coupling between InGaAs/GaAs coupled quantum wells and self-assembled InAs quantum dots by measuring the linewidths, peak energies and peak intensities of photoluminescence peaks for different pump powers and lateral locations
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