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The effect of Indium (In) implantation in n‐type GaN is studied using Raman spectroscopy and Rutherford backscattering (RBS). The RBS analysis reveals that the 700 keV In implantation results in the formation of a subsurface defective region that extends to a depth of 400 nm. An abrupt increase (∼93%) of the maximum defect concentration is observed for fluences in the range 1.5 and 5×1014 cm‐2. A...
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