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Phase change random access memory (PRAM) is one of the most promising non-volatile memories due to its ability to store digital data in the form of crystalline and amorphous phases of phase change materials. As a phase change material, Ge 2 Sb 2 Te 5 (GST225) is usually used, due to its reversible phase transition capability with speeds of less than 100ns between the crystalline...
Recently, nano imprint lithography has been developed for mass production of nano-scale patterns on large-scale substrates. To achieve high throughput and cost reduction, roll-to-roll imprint lithography has been introduced. The roll-to-roll imprint is the suitable process for large area patterning, especially, flexible substrates for display devices. In this study, roll-to-roll imprint stamp is fabricated...
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