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A new etching technique for crystalline silicon wafers is developed. The etching technique uses hydrogen radicals supplied by hydrogen remote plasma at room temperature with gas pressures of 0.2-0.5 Torr and hydrogen flow rates of 160-180 sccm for 5-60 min. Scanning electron microscope (SEM) images are used to investigate the surface morphology after etching process. Furthermore, the surface reflectances...
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