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High-resistivity GaAs grown at low temperatures by molecular beam epitaxy was used as the surface passivation layer of MESFETs. When these MESFETs are biased in the saturation region, the frequency dispersions of the transconductance and output resistance are reduced compared to those of a MESFET without a passivation layer.<<ETX>>
Side-gating effects relevant to GaAs digital, analog, and monolithic microwave integrated circuits have been significantly reduced or eliminated by using a high-resistivity GaAs buffer layer grown at low substrate temperatures by molecular beam epitaxy (MBE). The high resistivity of the low-temperature (LT) GaAs buffer is attributed to an arsenic excess of approximately 1 at.%. For analog ICs operating...
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