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RF amplifiers are demonstrated using a three- dimensional (3D) wafer-scale integration technology based on silicon-on-insulator (SOI) CMOS process. This new 3D implementation reduces the amplifier size and shortens interconnects for smaller loss and delay. In addition, 3D integration allows the stacking of wafers fabricated using different process technologies to optimize the overall circuit performance...
An RF amplifier implemented by wafer-scale three-dimensional integration of three completely fabricated silicon-on-insulator wafers is demonstrated. The MOSFETs are on the top and bottom tier with middle-tier matching circuits. Measured amplifier performance agrees well with simulation and the footprint is approximately 40% smaller than the conventional 2D layout.
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