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The influence of the total thickness (periods of AlN/GaN SLs) of AlN/GaN superlattices (SLs) buffer on the static electrical properties of AlGaN/GaN HFETs is study for the purpose of improving device's breakdown voltage (BV) and reducing its on-resistance (RON). It is found that for top-GaN layer with a constant thickness of lμm, a proper thickness of AlN/GaN SLs buffer (such as 2.5 μm with 100 period...
In this paper, the leakage path and breakdown behavior of GaN on silicon substrate were studied systematically. Three terminal breakdown voltage characteristics of the samples with various ohmic contacts spacing were evaluated. With increasing the spacing between the contacts, the breakdown voltage increased linearly first and then saturated. In order to clarify the breakdown behavior, leakage path...
Dual-color InGaN/GaN pyramidal micro light-emitting diode ( -LED) was directly grown on SiO masked Si substrate via selective area growth technology. An electrically driven dual-color -LED with typical rectifying behavior and a turn-on voltage of about 3 V was demonstrated. Two emission peaks locating at 440 and 490 nm were observed by micro-photoluminescence. Using catholuminescence...
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