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MoO3, WO3 single and Mo/W binary compounds at different Mo/W atomic percentages were deposited by sol-gel spin coating technique on Si/Si3N4 substrates provided with Pt interdigital electrodes and annealed at 450°C for 1 h. Films were characterized by SEM, grazing incidence XRD and XPS techniques. Electrical responses to different gases were obtained by exposing the films to 30 ppm CO and 1 ppm NO...
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