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Using scanning tunneling microscopy (STM) and low energy electron diffraction, the structure of the Al/Si(111) γ-phase has been studied. The STM observations with atomic resolution in conjunction with the quantitative characterization of the γ-phase, including, determination of the Al coverage, top Si atom density, interatomic distances and superstructure mean period have allowed us to distinguish...
Using low-energy electron diffraction, Auger electron spectroscopy and STM, the peculiarities of the Al/Si(100) interface formation at 400-550 o C has been studied. At low Al coverages (~0.05-0.2 ML), interaction of Al atoms with a top Si(100) substrate layer proceeds by two competitive mechanisms. First mechanism prevails at Si(100) surface with a low density of missing-dimer defects and...
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