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Numerical simulations are performed for Bridgman crystal growth of several semiconductor materials, such as InAs, InSb, GaSe, CdTe, PbTe, and GaP. For materials with low Prandtl and low Grashof numbers, melt convection is weak and the traditional Bridgman technique is a suitable growth process. For the materials with high Prandtl numbers in their melt status and the growth system with high Grashof...
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