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The tight-binding model is employed to study magnetoelectronic structures of the AB-stacked graphite. A specifically full band calculation on overall energy region is presented to compare with SWMcC method, which only concerns the magnetoelectronic structures along the HKH-axis. It is found that magnetoband structures, strongly depending on the perpendicular magnetic field (B) and the interlayer interactions,...
The interlayer interactions in the AA-stacked nanographite ribbons significantly affect density of states, energy gap, band structure, and free carriers. Density of states exhibits many special structures, including plateau, discontinuities, and divergent peaks. Energy gaps of the semiconducting armchair ribbons decline rapidly as the number of ribbons increases. Most of them could exhibit the semiconductor-semimetal...
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