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By means of angle resolved photoelectron spectroscopy using synchrotron radiation, we have measured the valence band and surface sensitive Si 2p core-level spectra for the Si(111)3 1-Mg surface. The dispersion of the valence band shows the fact that this surface has a semiconducting property and two surface states in the projected bulk band gap at the KK point. From the fitting results of the Si...
The electronic structure of a Si(111)4 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1° off-axis Si(111) wafer as substrate, a single-domain Si(111)4 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 1 domains. Three SSs that cross the Fermi level have...
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