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W delta doping in Si epitaxial growth by WF 6 and SiH 4 reaction has been investigated using an ultraclean cold-wall low-pressure chemical vapor deposition (CVD) system. Atomic-layer order W deposition is performed on wet-cleaned Si(100) substrate at 100 o C using WF 6 and SiH 4 . Si epitaxial growth is achieved by SiH 4 reaction at 480 o C on...
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