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Results of gallium nitride crystallization by ammonothermal method are presented. GaN crystals grown earlier by a HVPE method on an ammonothermal GaN substrate and an MOCVD-GaN/sapphire template were used as seeds. Structural and optical properties of the obtained materials are studied and compared. Large radius of curvature (>100m) and low dislocation density (7×104cm−2) can be reproduced in the...
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