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In this article, a transport model of gate solution AlGaN/GaN high electron mobility transistor has been developed that is capable of accurately predicting the sensitivity of the drain current as well as small-signal parameters such as drain conductance, device transconductance and cutoff frequency to PH values of the electrolyte and to charged adsorbents at the semiconductor-electrolyte interface...
Nitride semiconductors and their alloys recently have versatile applications as high-power and high-efficiency electro optical devices duo to their high thermal stability, direct transition and wide bang-gap. Nanostructure light emitting diodes of these materials have an emission spectrum from infrared to ultraviolet. In this paper, besides simulating a nanostructure nitride semiconductor LED, such...
The intersubband transition in quantum wells was investigated from the viewpoint of application to operate at fiber-optics telecommunication wavelengths at low switching powers. For this purpose, we have simulated an electroabsorption modulator for (lambda =1.55 mum) based on Stark shifting an intersubband resonance in AlN-GaN-AlGaN-AlN step QWs which can operate at fiber-optics telecommunication...
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