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Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaO x layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO 2 interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT)...
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