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In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor deposition growth of AlGaN multi‐quantum‐well heterostructures in an Aixtron 6 × 2″ close‐coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity length of ∼1 mm. Two different layer structure designs are presented in this work. Both laser bars were optically pumped by a pulsed...
Optically pumped deep‐ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa1−xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo‐pumped lasers. The threshold power density was 1.88 MW cm−2. The layers...
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