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This paper describes the effect of thickening Au-plated ohmic electrodes in AlGaN/GaN HEMTs on the drain current and on-resistance. By increasing the thickness of Au-plated ohmic electrodes up to 5 µm, the fabricated AlGaN/GaN HEMT with a total gate width from 2 to 10 mm exhibited an increase in the maximum drain current by about 50 % and a reduction in the on-resistance by more than 40 %.
A 32 nm logic technology for high performance microprocessors is described. 2nd generation high-k + metal gate transistors provide record drive currents at the tightest gate pitch reported for any 32 nm or 28 nm logic technology. NMOS drive currents are 1.62 mA/um Idsat and 0.231 mA/um Idlin at 1.0 V and 100 nA/um Ioff. PMOS drive currents are 1.37 mA/um Idsat and 0.240 mA/um Idlin at 1.0 V and 100...
Two key process features that are used to make 45 nm generation metal gate + high-k gate dielectric CMOS transistors are highlighted in this paper. The first feature is the integration of stress-enhancement techniques with the dual metal-gate + high-k transistors. The second feature is the extension of 193 nm dry lithography to the 45 nm technology node pitches. Use of these features has enabled industry-leading...
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