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Z2-FET, a partially gated diode, was explored for ESD application due to its sharp switching behavior [1,2]. 1T-DRAM application of Z2-FET has recently been evidenced [3,4] leading to an even stronger interest for this device. However, a deep explanation of physical phenomena involved in Z2-FET operation has not been proposed yet. In this paper, we pro-vide a detailed description of the Z2-FET DC...
We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z2-FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z2-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.
Tunneling-based transistors (TFETs) have attracted interest due to their (theoretical) capability of switching more sharply than MOSFETs. However, other mechanisms that take place in SOI devices can provide even more abrupt switching and higher current. We examine the family of emerging TFET-competing devices based on barrier modulation, bipolar amplification and impact ionization. Practical results...
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