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In this paper, a concept for a 1T-DRAM in AlGaN/GaN based HEMTs is presented for the first time – the Hetero-RAM (HRAM). This memory takes advantage of the natural coexistence of both hole and electron gases and uses hole gas transient and dynamic capacitive coupling effects. It is interesting to note that up to now the hole gas has been considered as parasitic, since it was seen to trigger hysteresis...
Even in fully-depleted (FD) SOI MOSFETs, the floating-body potential variations may lead to strong transient effects on the current characteristics. A physics-based model, enabling the fast computing of the potential variation with time, is proposed in this paper. The model is validated, for a wide range of technological parameters and biases, by 2D numerical simulations. This model reproduces the...
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