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The ZnSe MSM photodetector has been fabricated on a GaAs substrate utilizing the selective-area epitaxy method. The as-grown ZnSe epilayer shows good quality by XRD and PL measurement. Optical and electrical properties of the ZnSe MSM photodiode were analysed both in this study. The dark current density measured at a bias of 5 V was 4.5times10-8 A/cm2. The maximum photoresponsivity of 0.1 A/W and...
A novel, three-step dry etching process for the fabrication of first-order diffraction gratings in III-V semiconductors is reported. The process takes advantage of the etching of thin films of SiO/sub 2/ and of a sensitive, organosilicon electron-beam resist by the H/sub 2//CH/sub 4/ plasma. It reduces wafer handling and eliminates wet stripping of the resist. The gratings were imaged with a scanning...
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