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The deposition of SiNx:H as anti-reflection coating has become a standard step in industrial production of silicon solar cells. In the present work the improvement of the anti-reflection properties and thus the improvement of the short circuit current density by deposition of a SiNx:H double layer coating are investigated. It is shown that an optimised double layer coating with indices n1 ap 1.8 and...
The deposition of silicon nitride (SiNx) films by PECVD is widely used for silicon solar cell manufacturing due to its potential for low surface recombination, high bulk passivation and good anti-reflection coating properties. Some experiments have been carried out in our lab in order to optimise the deposition conditions. The RF and MW power, responsible of the silane and ammonia dissociation, are...
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